Dry Etching of BST using Inductively Coupled Plasma
نویسندگان
چکیده
منابع مشابه
Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma
The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...
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In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifically, utilizing an advanced dry etching tool to define InP Gunn diode mesas. Unlike FeCl3-based photochemical etches, the Inductively Coupled Plasma (ICP) offers excellent sidewall anisotropy and uniformity, which provides improved process consistency to facilitate mass manufacturablity of millime...
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Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor ~ICP!. Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etch rate and selectivity behaviors for silicon dioxide, silicon, and passively deposited fluorocarbon films. Using in situ ellipsometry, the etch rat...
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ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2005
ISSN: 1229-7607
DOI: 10.4313/teem.2005.6.2.046